氮化硅

英文名： Silicon nitride

别名： 氮化硅;四氮化三硅;氧化镁粘结型氮化硅溅射靶;氮化硅粉末;氧化镁粘结型氮化硅(IV)溅射靶, 50.8MM (2.0IN) DIA X 3.18M;氧化镁粘结型氮化硅(IV)溅射靶, 50.8MM (2.0IN) DIA X 6.35M;氧化镁粘结型氮化硅(IV)溅射靶, 76.2MM (3.0IN) DIA X 3.18M;30nm氮化硅;N-苄氧羰基-L-酪氨酸;氮化硅(IV);氮化硅,纳米级;纳米氮化硅;纳米氮化硅陶瓷粉体;纳米四氮化三硅;亚微米级氮化銈;纳米氮化硅厂家直销微米高纯超细 Si3N4;高纯度氮化硅粉体生产工艺的制作方法展开

产品编号： A1220007

CAS No.： 12033-89-5

分子式： N₄Si₃

分子量： 140.28

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货号	规格	纯度	目录价	您的价格	华东	华中	华北	华南	西南	数量	购物车
A1220007-5g	5g	≥99.9% metals basis, 200 mesh	¥129.90		3	0	0	0	0
A1220007-25g	25g	≥99.9% metals basis, 200 mesh	¥299.90		2	0	0	0	0

中文名称	氮化硅
中文别名	氮化硅;四氮化三硅;氧化镁粘结型氮化硅溅射靶;氮化硅粉末;氧化镁粘结型氮化硅(IV)溅射靶, 50.8MM (2.0IN) DIA X 3.18M;氧化镁粘结型氮化硅(IV)溅射靶, 50.8MM (2.0IN) DIA X 6.35M;氧化镁粘结型氮化硅(IV)溅射靶, 76.2MM (3.0IN) DIA X 3.18M;30nm氮化硅;N-苄氧羰基-L-酪氨酸;氮化硅(IV);氮化硅,纳米级;纳米氮化硅;纳米氮化硅陶瓷粉体;纳米四氮化三硅;亚微米级氮化銈;纳米氮化硅厂家直销微米高纯超细 Si3N4;高纯度氮化硅粉体生产工艺的制作方法
英文名称	Silicon nitride
英文别名	Silicon nitride;Siliconnitridemeshlightgraypowder;trisilicon tetranitride;Siliconnitridepowderprimarilyphase;Silicon (IV) nitride;Nano silicon nitride;SILICON NITRIDE, powder;Trisilicon tetranitride (alpha);Denka Silicon Nitride SN-F 2;E 05;E 05 (nitride);E 10;E 10 (nitride);Nano-silicon nitride powder;Silicon nitride (Si3N4);QHB8T06IDK;Silicon(IV) nitride, alpha phase;Silicon(IV) nitride;N4Si3;Nierite;Silicon IV nitride Powder;SILICON NITRIDE, Si3N4;HQVNEWCFYHHQES-UHFFFAOYSA-N;Silicon nitride, NIST RM 8983;8860AF;Silicon Nitride Powder, 98.5+% Nano;SILICON NITRIDE, ELECTRONIC GRADE;Silicon nitride fiber, >80% (crys;Silicon nitride, predominantly beta-phase, <=10micron primary particle size;Silicon nitride, nanopowder, <50 nm particle size (BET), >=98% trace metals basis;UNII-QHB8T06IDK;Silicon(IV) nitride, MgO binder, sputtering target, 50.8mm (2.0in) dia x 3.18mm (0.125in) thick;Silicon nitride, nanopowder, <50 nm particle size (spherical), >=98.5% trace metals basis;StarCeram? N, Silicon Nitride, (rtp), Grade M (Kyocera);Si3N4;Particle size distribution standard for sedigraph calibration, NIST SRM 659;NEEDLELOK;StarCeram? N, Silicon Nitride, (rtp), Grade P (Kyocera);12033-89-5;Iron Oxide (Fe3O4) Sputtering Targets;SILICONNITRIDE;2,4,6,7-tetraza-1,3,5-trisilahexacyclo[3.1.1.01,4.02,5.03,6.03,7]heptane;Q413828;MFCD00011230;Silicon nitride, ERM(R) certified Reference Material, powder;DTXSID20892247;EC 234-796-8;Yttrium Oxide (Y2O3) Powder;Silicon Nitride Powder, 98.5% Nano;SILICON NITRIDE [MI];Silicon nitride powders, NIST(R) SRM(R) 656, for quantitative analysis by powder diffraction;Silicon nitride, predominantly alpha-phase, <=10 micron;FT-0694612;Silicon nitride fiber, >80% (crystalline);NS00131447;Silicon nitride powder - specific surface area standard, NIST(R) SRM(R) 1900;1Si-hexacyclo[3.1.1.0?,?.0?,?.0?,?.0?,?]trisilazane;Silicon nitride Si3N4 GRADE M 11 (H?gan?s);EINECS 234-796-8;Silicon nitride, powder, >=99.9% trace metals basis;BAYSINID ST;Silicium Nitricatum;Silicon Nitride Nanofiber;Silicon nitride Si3N4 GRADE B 7 (H?gan?s);SINOVA;WIDIANIT N 2000;Silicon Nitride Si3N4 Grade HIGH PURITY for PV (H?gan?s);Trisilicon tetranitride;SILICON (IV) NITRIDE;DENKA SILICON NITRIDE SN-F 2;A-phase,99.9% metals basis
CAS号	12033-89-5
分子式	N₄Si₃
分子量	140.28
纯度	≥99.9% metals basis, 200 mesh